منابع مشابه
Structural studies on Te-rich Ge-Te melts
The structure of liquid Ge15Te85, Ge25Te75 and Ge33Te67 alloys has been studied by neutronand X-ray diffraction. Datasets obtained by the two techniques have been modelled simultaneously with the reverse Monte Carlo simulation method. As a result, the first coordination numbers and nearest neighbour distances for the studied alloys were estimated. On the base of the experimental data, Ge-Ge bon...
متن کاملElectrical and optical investigations in Te–Ge–Ag and Te–Ge–AgI chalcogenide glasses
(GeTe4)100-xAgx and (GeTe4)100-x(AgI)x glasses were prepared by a melting-quenching method. The glass electrical conductivity was investigated by both electrochemical impedance spectroscopy at different temperatures from 283K to 333K and four-probe method at room temperature (293K). Meanwhile, as a major factor determining the electrical conductivity of a solid, optical band gap was also studie...
متن کاملSTRUCTURAL STUDY OF SILVER PHOTODOPED Ge-Sb-Te FILMS
The migration of various metals (pre-dominantly, Ag, Cu, Zn) in amorphous chalcogenides under exposure of light has been studied for many years [1-4]. This effect is a characteristic of chalcogenide amorphous semiconductors when metals are deposited on films of these materials. Diffusion of metal into the film occurs by means of light irradiation mainly visible (near bandgap) light. The effect ...
متن کاملStructural Patterns in Ge/Sb/Te Phase-Change Materials
c © 2008 by John von Neumann Institute for Computing Permission to make digital or hard copies of portions of this work for personal or classroom use is granted provided that the copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise requires prior specific permission by the publisher ment...
متن کاملTe implantation in Ge(001) for n-type doping applications
5 10 Teþ ions cm 2 were implanted in an Ge(001) substrate using an industrial implanter with a Teþ beam energy of 180 keV. In addition to usual implantation-mediated defects observed in Ge with usual dopants, Te implantations lead to the formation of amorphous surface GeO clusters exhibiting micrometer scale sizes, as well as deep extended defects. Implantation defects promote the formation of ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Tydskrif vir geesteswetenskappe
سال: 2023
ISSN: ['0041-4751', '2224-7912']
DOI: https://doi.org/10.17159/2224-7912/2023/v63n2a15